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Abstract Chirality has been a property of central importance in physics, chemistry and biology for more than a century. Recently, electrons were found to become spin polarized after transmitting through chiral molecules, crystals, and their hybrids. This phenomenon, called chirality-induced spin selectivity (CISS), presents broad application potentials and far-reaching fundamental implications involving intricate interplays among structural chirality, topological states, and electronic spin and orbitals. However, the microscopic picture of how chiral geometry influences electronic spin remains elusive, given the negligible spin-orbit coupling (SOC) in organic molecules. In this work, we address this issue via a direct comparison of magnetoconductance (MC) measurements on magnetic semiconductor-based chiral molecular spin valves with normal metal electrodes of contrasting SOC strengths. The experiment reveals that a heavy-metal electrode provides SOC to convert the orbital polarization induced by the chiral molecular structure tospinpolarization. Our results illustrate the essential role of SOC in the metal electrode for the CISS spin valve effect. A tunneling model with a magnetochiral modulation of the potential barrier is shown to quantitatively account for the unusual transport behavior. 

Abstract Electrical generation and transduction of polarized electron spins in semiconductors (SCs) are of central interest in spintronics and quantum information science. While spin generation in SCs is frequently realized via electrical injection from a ferromagnet (FM), there are significant advantages in nonmagnetic pathways of creating spin polarization. One such pathway exploits the interplay of electron spin with chirality in electronic structures or real space. Here, utilizing chirality‐induced spin selectivity (CISS), the efficient creation of spin accumulation inn‐doped GaAs via electric current injection from a normal metal (Au) electrode through a self‐assembled monolayer (SAM) of chiral molecules (α‐helixl‐polyalanine, AHPA‐L), is demonstrated. The resulting spin polarization is detected as a Hanle effect in then‐GaAs, which is found to obey a distinct universal scaling with temperature and bias current consistent with chirality‐induced spin accumulation. The experiment constitutes a definitive observation of CISS in a fully nonmagnetic device structure and demonstration of its ability to generate spin accumulation in a conventional SC. The results thus place key constraints on the physical mechanism of CISS and present a new scheme for magnet‐free SC spintronics. 

Abstract Iterative thresholding algorithms seek to optimize a differentiable objective function over a sparsity or rank constraint by alternating between gradient steps that reduce the objective and thresholding steps that enforce the constraint. This work examines the choice of the thresholding operator and asks whether it is possible to achieve stronger guarantees than what is possible with hard thresholding. We develop the notion of relative concavity of a thresholding operator, a quantity that characterizes the worst-case convergence performance of any thresholding operator on the target optimization problem. Surprisingly, we find that commonly used thresholding operators, such as hard thresholding and soft thresholding, are suboptimal in terms of worst-case convergence guarantees. Instead, a general class of thresholding operators, lying between hard thresholding and soft thresholding, is shown to be optimal with the strongest possible convergence guarantee among all thresholding operators. Examples of this general class includes $$\ell _q$$ thresholding with appropriate choices of $$q$$ and a newly defined reciprocal thresholding operator. We also investigate the implications of the improved optimization guarantee in the statistical setting of sparse linear regression and show that this new class of thresholding operators attain the optimal rate for computationally efficient estimators, matching the Lasso.